Electron spin resonance.

To order the complete compilation report, use: ADA398590 The component part is provided here to allow users access to individually authored sections f proceedings, annals, symposia, etc. However, the component should be considered within [he context of the overall compilation report and not as a stand-alone technical report. Multilayered structures of a-Si/SiO 2 sequences were deposited using a magnetron sputtering system, where Si atoms are sputtered in an Ar-0 2 mixture. All samples have the same total thickness (250nm) and the thickness/layer is between 2 nm and 16 nm. The purpose of this paper is to investigate the inhomogeneity of these films and its limit. The sample composition and thickness were investigated by conventional Rutherford backscattering spectrometry (RBS), high resolution RBS using a magnetic spectrograph and elastic recoil detection (ERD). The analysis of the conventional RBS and ERD spectra has revealed that samples with 16 nm/layer consists of a-Si/Si0 2 sequences. The high-resolution RBS measurements have also shown a multilayered structure for samples with a smaller layer thickness. The composition of the SiO 2 layers for samples with 4 and 2 nm/layer is more SiO,, like, with different values of the x parameter. It seems that the interface region is dominant for these samples with 4 nm/layer and less. The structural study is completed with the ESR measurements, which revealed two paramagnetic species attributed to a-Si dangling bonds and E' centers respectively. The latter are characteristic for SiO 2 material. We found that a-Si DBs are present in all samples, irrespective of the layers thickness. Their spin density amounts to about 10 20 cm 3. In contrast, the E' centers are not present in the sample with 2 nm/layer.